Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model.
Konstantin O. PetrosyantsLev M. SamburskyIgor A. KharitonovBoris G. LvovPublished in: LATS (2016)
Keyphrases
- simulation model
- statistical model
- agent model
- simulation study
- formal model
- prior knowledge
- probability distribution
- theoretical analysis
- computational model
- monte carlo simulation
- fluid dynamics
- three dimensional
- simulation models
- mathematical analysis
- experimental data
- mathematical model
- high speed
- probabilistic model
- objective function