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A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS.
Cuilin Chen
Tsuyoshi Sugiura
Toshihiko Yoshimasu
Published in:
IEICE Trans. Electron. (2020)
Keyphrases
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silicon on insulator
ibm power processor
power consumption
cmos technology
frequency band
high speed
low power
high power
high sensitivity
integrated circuit
dual band
nm technology
clock gating
low cost
power management
power reduction