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Performance improvement of SOI Tunnel-FET using pure boron and Ge pocket layer.
Karabi Baruah
Satyabrat Malla Bujar Baruah
Srimanta Baishya
Published in:
Microelectron. J. (2024)
Keyphrases
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application layer
multi layer
significant improvement
real world
information systems
expert systems
low cost
simulation model