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Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

Julia KlugeAnthonin VerdyGabriele NavarroSerge BlonkowskiVeronique SousaSophie ChevalliezPhilippe KowalczykMathieu BernardNicolas BernierGuillaume BourgeoisNiccolo CastellaniPierre NoeLuca Perniola
Published in: NVMTS (2017)
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