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A study on HCI induced gate leakage current model used for reliability simulations in 90nm n-MOSFETs.

Nobukazu TsukijiHitoshi AokiMasaki KazumiTakuya TotsukaMasashi HigashinoHaruo Kobayashi
Published in: ASICON (2015)
Keyphrases
  • probabilistic model
  • human computer interaction
  • theoretical framework
  • mathematical model
  • simulation study