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8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology.
Ahmed S. H. Ahmed
Arda Simsek
Miguel Urteaga
Mark J. W. Rodwell
Published in:
BCICTS (2018)
Keyphrases
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power consumption
nm technology
low power
high power
cmos technology
clock gating
high speed
silicon on insulator
power management
power reduction
data processing
frequency band
wind turbine
power saving
cost effective
case study
core components
power dissipation
key technologies
rapid development
remote sensing