A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric.

Y. Huang J. P. Xu L. S. Wang S. Y. Zhu

Published in: Microelectron. Reliab. (2015)

Keyphrases

statistical model
genetic algorithm
management system
computational model
real world
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formal model
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probabilistic model
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steady state
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power consumption
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