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Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM.

Gia Vinh LuongSebastiano StrangioAndreas T. TiedemannP. BernardyStefan TrellenkampPierpaolo PalestriSiegfried MantlQing-Tai Zhao
Published in: ESSDERC (2017)
Keyphrases
  • noise level
  • high speed
  • real world
  • noisy data
  • random noise
  • neural network
  • support vector
  • signal to noise ratio