A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS.
Yibo LiuTaikun MaPingda GuanLuhong MaoBaoyong ChiPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2019)
Keyphrases
- frequency band
- cmos technology
- silicon on insulator
- frequency response
- metal oxide semiconductor
- nm technology
- ultra low power
- low power
- back end
- multi band
- power consumption
- low cost
- high power
- high frequency
- signal to noise ratio
- power supply
- low frequency
- subband
- high speed
- radio frequency
- analog vlsi
- transfer function
- spectral resolution
- patch antenna
- integrated circuit
- circuit design
- low voltage
- parallel processing
- wavelet packet
- delay insensitive
- power dissipation
- frequency domain