A BJT-based temperature-to-digital converter with ±60mK (3σ) inaccuracy from -70°C to 125°C in 160nm CMOS.
Bahman YousefzadehSaleh Heidary ShalmanyKofi A. A. MakinwaPublished in: VLSI Circuits (2016)
Keyphrases
- analog to digital converter
- metal oxide semiconductor
- low voltage
- data conversion
- circuit design
- cmos technology
- cmos image sensor
- mixed signal
- low cost
- analog vlsi
- control method
- low power
- transfer function
- integrated circuit
- relational databases
- vlsi circuits
- silicon on insulator
- image sensor
- digital media
- power supply
- power consumption
- real time