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Magnetoresistive random access memory using magnetic tunnel junctions.

Saied TehraniJon M. SlaughterMark DeherreraBrad N. EngelNicholas D. RizzoJohn SalterMark DurlamRenu W. DaveJason JaneskyBrian ButcherKen SmithGreg Grynkewich
Published in: Proc. IEEE (2003)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • main memory
  • high speed
  • embedded dram
  • database
  • databases
  • memory access