Login / Signup

Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation.

Miin-Horng JuangJim YuC. C. HwangD. C. ShyeJ. L. Wang
Published in: Microelectron. Reliab. (2011)
Keyphrases
  • long term
  • case study
  • databases
  • multiscale
  • numerical simulations