A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time.
Lifang LiuDong WuXuemei LiuZongliang HuoMing LiuLiyang PanPublished in: Sci. China Inf. Sci. (2015)
Keyphrases
- random access
- flash memory
- nm technology
- solid state
- garbage collection
- floating gate
- power consumption
- disk drives
- low power
- hard disk
- storage systems
- storage devices
- circuit design
- low cost
- power dissipation
- databases
- routing protocol
- neural network
- energy efficiency
- multi dimensional
- wireless sensor networks
- database