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Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.
Zhiting Lin
Luanyun Li
Xiulong Wu
Chunyu Peng
Wenjuan Lu
Qiang Zhao
Published in:
IEEE Trans. Circuits Syst. II Express Briefs (2021)
Keyphrases
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low power consumption
power consumption
low power
high speed
low cost
real time
application specific
databases
signal to noise ratio
storage devices
single chip
data model
database design
field programmable gate array