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A Computing-in-memory Scheme with Series Bit-cell in STT-MRAM for Efficient Multi-bit Analog Multiplication.
Zuolei Hao
Yue Zhang
Jinkai Wang
Hongyu Wang
Yining Bai
Guanda Wang
Weisheng Zhao
Published in:
NANOARCH (2021)
Keyphrases
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random access memory
bit vector
successive approximation
design considerations
analog to digital converter
pseudorandom
low voltage
protection scheme
limited memory
integer arithmetic
bit wise
main memory
arithmetic operations
provably secure
magnetic tape
bit string