Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection.
Stephane BlinLucie TohmeDominique CoquillatShogo HoriguchiYusuke MinamikataShintaro HisatakePhilippe NouvelThomas CohenAnnick PenarierFabrice CanoLuca VaraniWojciech KnapTadao NagatsumaPublished in: J. Commun. Networks (2013)
Keyphrases
- wireless communication
- wireless networks
- computer simulation
- communication networks
- wireless sensor networks
- fourth generation
- mobile communication
- wireless channels
- wireless technologies
- high speed
- fading channels
- integrated circuit
- spectrum sensing
- intelligent transportation systems
- mobile users
- low power
- power consumption
- high data rate
- broadband wireless
- field effect transistors
- wireless systems
- mobile networks
- distributed databases