Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate.
Hideyuki OkitaToshiharu MaruiShinichi HoshiMasanori ItohFumihiko TodaYoshiaki MorinoIsao TamaiYoshiaki SanoShouhei SekiPublished in: IEICE Trans. Electron. (2009)