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H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun.
Yeong Min Jang
Youngchae Jeon
Jinho Jeong
Published in:
IEEE Access (2022)
Keyphrases
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silicon on insulator
high power
rapid development
data processing
case study
e learning
infrared
cost effective
power consumption
low power
frequency band
high sensitivity
spectral bands