Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET.
Takamasa KawanagoTomoaki ObaRyo IkomaHiroyuki TakagiShunri OdaPublished in: ESSDERC (2018)
Keyphrases
- objective function
- high precision
- detection method
- support vector machine svm
- fully automatic
- similarity measure
- preprocessing
- experimental evaluation
- dynamic programming
- model selection
- significant improvement
- artificial neural networks
- pairwise
- computational complexity
- neural network
- support vector machine
- high accuracy
- k means
- segmentation method
- genetic algorithm