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A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants.

Ziyue XuAdam KhalifaAnkit MittalMehdi NasrollahpourmotlaghzanjaniDiptashree DasMarvin OnabajoNian Xiang SunSydney S. CashAatmesh Shrivastava
Published in: IEEE J. Solid State Circuits (2022)
Keyphrases
  • fully integrated
  • output voltage
  • single phase
  • pulse width modulation
  • neural network
  • real time
  • input output
  • workflow management
  • network architecture