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-Based Methodology Using 180 nm SOI From -40 °C to 200 °C.
João Roberto Raposo De Oliveira Martins
Ali Mostafa
Jérôme Juillard
Rachid Hamani
Francisco De Oliveira Alves
Pietro Maris Ferreira
Published in:
IEEE Open J. Circuits Syst. (2021)
Keyphrases
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silicon on insulator
data sets
genetic algorithm
conceptual framework