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Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric.

Myung Hun WooByung Chul JangJunhwan ChoiGwang Hyuk ShinHyejeong SeongSung Gap ImSung-Yool Choi
Published in: ESSDERC (2016)
Keyphrases
  • floating gate
  • circuit design
  • data sets
  • neural network
  • support vector