A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET.

Steven Callender Abhishek Agrawal Amy Whitcombe Ritesh Bhat Mustafijur Rahman Chun C. Lee Peter Sagazio Georgios C. Dogiamis Brent R. Carlton Christopher D. Hull Stefano Pellerano

Published in: IEEE J. Solid State Circuits (2022)

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