InGaAs Diodes for Terahertz Sensing - Effect of Molecular Beam Epitaxy Growth Conditions.
Vilius PalenskisLinas MinkeviciusJonas MatukasDomas JokubauskisSandra PralgauskaiteDalius SeliutaBronislovas CechaviciusRenata ButkuteGintaras ValusisPublished in: Sensors (2018)