An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS.

Changhua Cao Haifeng Xu Yu Su Kenneth K. O

Published in: ESSCIRC (2005)

Keyphrases

fully integrated
power consumption
high power
low power
silicon on insulator
high speed
cmos technology
nm technology
power supply
ibm power processor
power dissipation
power management
power reduction
workflow management
low cost
power distribution
clock frequency
decision making
case study
knowledge base