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Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects.
Heba Abunahla
Baker Mohammad
Dirar Homouz
Curtis J. Okelly
Published in:
IEEE Trans. Circuits Syst. I Regul. Pap. (2016)
Keyphrases
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quantum mechanics
room temperature
field effect transistors
objective function