A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features.
Yesin RyuYoung-Cheon KwonJae Hoon LeeSung-Gi AhnJaewon ParkKijun LeeYu Ho ChoiHan-Won ChoJae San KimJungyu LeeHaesuk LeeSeung Ho SongJe-Min RyuYeong Ho YunUseung ShinDajung ChoJeong Hoan ParkJae-Seung JeongSuk Han LeeKyounghwan LimTae-Sung KimKyungmin KimYu Jin ChaIk Joo LeeTae Kyu ByunHan Sik YooYeong Geol SongMyung-Kyu LeeSunghye ChoSung-Rae KimJi-Min ChoiHyoungMin KimSoo Young KimJaeyoun YounMyeong-O. KimKyomin SohnSangJoon HwangJooYoung LeePublished in: VLSI Technology and Circuits (2022)