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Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters.

Ran ChengMing TianChangfeng WangZhimei CaiJie ZhangYan-Yan ZhangYi Zhao
Published in: ASICON (2019)
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