Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters.
Ran ChengMing TianChangfeng WangZhimei CaiJie ZhangYan-Yan ZhangYi ZhaoPublished in: ASICON (2019)