An 11.2nW, 0.45V PVT-tolerant Pulse-width Modulated Temperature Sensor in 65 nm CMOS.
Ali AzamZhidong BaiJeffrey Sean WallingPublished in: NEWCAS (2018)
Keyphrases
- pulse width
- image sensor
- cmos technology
- cmos image sensor
- heat flow
- silicon on insulator
- metal oxide semiconductor
- sensor networks
- sensor data
- low cost
- nm technology
- high speed
- analog vlsi
- low power
- analog to digital converter
- power supply
- focal plane
- dynamic range
- multi sensor
- power consumption
- high sensitivity
- delay insensitive
- vlsi circuits
- image processing algorithms
- parallel processing
- data acquisition
- real time
- contact force
- surface temperature
- video camera
- neural network