A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications.
Thomas BücherJanusz GrzybPhilipp HillgerHolger RückerBernd HeinemannUllrich R. PfeifferPublished in: IEEE J. Solid State Circuits (2022)
Keyphrases
- mixed signal
- cmos technology
- low power
- high power
- power consumption
- high speed
- silicon on insulator
- nm technology
- communication technologies
- power dissipation
- rapid development
- communication systems
- cost effective
- communication tools
- network infrastructure
- clock frequency
- communication networks
- solar cell
- clock gating
- case study