A 4.3μW 28nm-CMOS pixel front-end with switched inverter-based comparator.
Federica RestaAlessandra PipinoAlessandro PezzottaM. De MatteisMarco CroceAndrea BaschirottoPublished in: IEEE SENSORS (2016)
Keyphrases
- image sensor
- cmos technology
- focal plane
- silicon on insulator
- low power
- nm technology
- power consumption
- back end
- metal oxide semiconductor
- high speed
- infrared
- low cost
- pixel level
- image pixels
- circuit design
- analog vlsi
- input image
- image segmentation
- pixel wise
- dynamic range
- motion blur
- single chip
- control algorithm
- pixel values
- graph cuts
- analog to digital converter