W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz.
F. Erdem ArkunDan DenninghoffHaidang TranRyan TranNicholas C. MillerMichael ElliottRyan GilbertIvan MilosavljevicGeorges SiddiqiMicha FiremanAndrea L. CorrionDavid FanningChristi PetersonAriel GetterAndrew ClapperPublished in: DRC (2023)