Login / Signup

Simplified quantitative stress-induced leakage current (SILC) model for MOS devices.

M. OssaimeeKhaled KirahW. FikryA. GirgisO. A. Omar
Published in: Microelectron. Reliab. (2006)
Keyphrases
  • computational model
  • high level
  • objective function
  • probabilistic model
  • learning environment