and 26.5% PAE in 16-nm FinFET CMOS.
Kun-Da ChuSteven CallenderYanjie WangJacques Christophe RudellStefano PelleranoChristopher D. HullPublished in: IEEE J. Solid State Circuits (2021)
Keyphrases
- cmos technology
- silicon on insulator
- metal oxide semiconductor
- nm technology
- power consumption
- low power
- low cost
- analog vlsi
- power supply
- high speed
- low voltage
- delay insensitive
- integrated circuit
- image sensor
- vlsi circuits
- circuit design
- power dissipation
- three dimensional
- data sets
- single chip
- image sequences
- cmos image sensor
- hd video
- artificial intelligence
- neural network