Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs.
Yinghui ZhongShu-xiang SunWen-bin WongHaili WangXiao-Ming LiuZhiyong DuanPeng DingZhi JinPublished in: Frontiers Inf. Technol. Electron. Eng. (2017)