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Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation.

Martin ThurnerPhilipp LindorferSiegfried Selberherr
Published in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (1990)
Keyphrases
  • finite difference
  • numerical analysis
  • case study
  • numerical simulations
  • learning algorithm
  • mathematical model