Physical model for GaN HEMT design optimization in high frequency switching applications.
D. CucakMiroslav VasicÓscar GarcíaYves BouvierJesús Ángel OliverPedro AlouJosé A. CobosA. WangS. Martin-HorcajoF. RomeroFernando CallePublished in: ESSDERC (2014)