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A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI.
M. Sultan M. Siddiqui
Zhao Chuan Lee
Tony Tae-Hyoung Kim
Published in:
A-SSCC (2017)
Keyphrases
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data processing
computer systems
e learning
knowledge base
moving objects
hidden markov models
low voltage