Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution.
Weifeng LyuYing HanCaiyun ZhangWeijie WeiDengke ChenPublished in: CECNet (2023)
Keyphrases
- uniformly distributed
- kernel density
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- power law
- maximum likelihood estimation
- spatial distribution
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