• search
    search
  • reviewers
    reviewers
  • feeds
    feeds
  • assignments
    assignments
  • settings
  • logout

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

Jiongjiong MoHua ChenZhiyu WangFa-Xin Yu
Published in: J. Sensors (2017)
Keyphrases