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Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors.

Yiming LiChih-Hong HwangShao-Ming Yu
Published in: International Conference on Computational Science (4) (2007)
Keyphrases
  • numerical simulations
  • theoretical analysis
  • low cost
  • high speed
  • heat transfer
  • random access memory
  • image segmentation
  • wireless sensor networks
  • database applications
  • field effect transistors
  • numerical calculation