Login / Signup

Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory.

Jonghyeon HaMinji BangGyeongyeop LeeMinki SuhChong-Eun KimJungsik Kim
Published in: IEEE Access (2023)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • sensor networks
  • object oriented