A 480 mW 2.6 GS/s 10b Time-Interleaved ADC With 48.5 dB SNDR up to Nyquist in 65 nm CMOS.
Kostas DorisErwin JanssenClaudio NaniAthon ZanikopoulosGerard van der WeidePublished in: IEEE J. Solid State Circuits (2011)
Keyphrases
- power consumption
- nm technology
- power supply
- cmos technology
- hd video
- low power
- analog to digital converter
- silicon on insulator
- sampling rate
- metal oxide semiconductor
- single chip
- high definition
- low cost
- power dissipation
- low voltage
- power management
- image sensor
- high speed
- database
- delay insensitive
- high frequency
- analog vlsi
- video transmission
- wide dynamic range
- real time