A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line.
Satoshi EtoMasato MatsumiyaMasato TakitaYuki IshiiToshikazu NakamuraKuninori KawabataHideki KanoAyako KitamotoToshimi IkedaToru KogaMitsuhiro HigashihoYuji SerizawaKazuo ItabashiOsamu TsuboiYuji YokoyamaMasao TaguchiPublished in: IEEE J. Solid State Circuits (1998)