Login / Signup

Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles.

Qiaozhen ZhouFang WangXuanyu ZhaoKai HuYujian ZhangXin ShanXin LinYupeng ZhangKe ShanKailiang Zhang
Published in: J. Intell. Fuzzy Syst. (2023)
Keyphrases