Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT.
Sameh G. KhalilRongming ChuRay LiDanny WongScott NewellXu ChenM. ChenD. ZehnderS. KimA. CorrionBrian HughesKarim BoutrosC. NamuduriPublished in: ESSDERC (2012)