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A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.

Sangbeom KangWoo Yeong ChoBeak-Hyung ChoKwangJin LeeChangsoo LeeHyung-Rok OhByung-Gil ChoiQi WangHye-Jin KimMu-Hui ParkYu-Hwan RoSuyeon KimChoong-Duk HaKi-Sung KimYoung-Ran KimDu-Eung KimChoong-Keun KwakHyun-Geun ByunGitae JeongHong-Sik JeongKinam KimYunSueng Shin
Published in: IEEE J. Solid State Circuits (2007)
Keyphrases
  • random access memory
  • design considerations
  • parallel algorithm
  • database
  • real time
  • databases
  • high speed
  • low cost
  • signal processing
  • shared memory
  • low voltage