64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology.
Koichi FukudaYoshihisa WatanabeEiichi MakinoKoichi KawakamiJumpei SatoTeruo TakagiwaNaoaki KanagawaHitoshi ShigaNaoya TokiwaYoshihiko ShindoTakeshi OgawaToshiaki EdahiroMakoto IwaiOsamu NagaoJunji MushaTakatoshi MinamotoYuka FurutaKosuke YanagidairaYuya SuzukiDai NakamuraYoshikazu HosomuraRieko TanakaHiromitsu KomaiMai MuramotoGo ShikataAyako YuminakaKiyofumi SakuraiManabu SakaiHong DingMitsuyuki WatanabeYosuke KatoToru MiwaAlex MakMasaru NakamichiGertjan HeminkDana LeeMasaaki HigashitaniBrian MurphyBo LeiYasuhiko MatsunagaKiyomi NarukeTakahiko HaraPublished in: IEEE J. Solid State Circuits (2012)
Keyphrases
- flash memory
- cmos technology
- spl times
- low power
- random access memory
- high speed
- solid state
- main memory
- random access
- file system
- low voltage
- power consumption
- parallel processing
- embedded systems
- database systems
- power dissipation
- b tree
- flip flops
- data storage
- low cost
- silicon on insulator
- image sensor
- mixed signal
- storage devices
- data structure
- small size
- real time
- nearest neighbor
- image processing
- database