Fully-integrated SPAD active quenching/resetting circuit in high-voltage 0.35-μ m CMOS for reaching PDP saturation at 650 nm.
Alija DervicSaman Kohneh PoushiHorst ZimmermannPublished in: DDECS (2021)
Keyphrases
- fully integrated
- high voltage
- cmos technology
- silicon on insulator
- circuit design
- metal oxide semiconductor
- low power
- high speed
- analog vlsi
- nm technology
- low voltage
- power consumption
- operating conditions
- delay insensitive
- low cost
- phase locked loop
- normal operation
- power dissipation
- partial discharge
- information systems
- workflow management
- databases
- database
- integrated circuit
- training set
- information technology