A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field.
Elisa PlataniaZhiyang ChenFilippo ChimentoLiqing LuEnrico SantiAngelo RacitiJerry L. HudginsH. Alan MantoothDavid C. SheridanJ. CassadyPublished in: IAS (2008)